cystech electronics corp. spec. no. : c737q8 issued date : 2009.04.29 revised date : 2012.03.01 page no. : 1/9 MTB20N03AQ8 cystek product specification n-channel logic level enhancement mode power mosfet MTB20N03AQ8 bv dss 30v i d 10.2a r ds(on) @v gs =10v, i d =9a 13.6 m (typ) r ds(on) @v gs =4.5v, i d =7a 23.6 m (typ) description the MTB20N03AQ8 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device de sign, low on-resistance and cost effectiveness. the sop-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applicati ons such as dc/dc converters. features ? single drive requirement ? low on-resistance ? fast switching characteristic ? dynamic dv/dt rating ? repetitive avalanche rated ? pb-free & halogen-free package symbol outline MTB20N03AQ8 sop-8 pin 1 g gate d drain s source
cystech electronics corp. spec. no. : c737q8 issued date : 2009.04.29 revised date : 2012.03.01 page no. : 2/9 MTB20N03AQ8 cystek product specification absolute maximum ratings (tc=25 c, unless otherwise noted) parameter symbol limits unit drain-source voltage v ds 30 gate-source voltage v gs 20 v continuous drain current @ t a =25 c, v gs =10v i d 10.2 continuous drain current @ t a =100 c, v gs =10v i d 6.5 pulsed drain current i dm 40 *1 avalanche current i as 10 a avalanche energy @ l=0.1mh, i d =10a, r g =25 e as 5 repetitive avalanche energy @ l=0.05mh e ar 1.6 *2 mj t a =25 c 3.1 total power dissipation t a =100 c p d 1.2 w operating junction and storage temperature tj, tstg -55~+150 c note : *1 . pulse width limited by maximum junction temperature *2. duty cycle 1% thermal data parameter symbol value unit thermal resistance, junction-to-case r th,j-c 25 c/w thermal resistance, junction-to-ambient (note) r th,j-a 40 c/w note : 40c / w when mounted on a 1 in 2 pad of 2 oz copper, t 10s; 125 c/w when mounted on minimum pad. characteristics (t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v v gs =0, i d =250 a v gs(th) 1.0 1.7 3.0 v v ds = v gs , i d =250 a g fs - 9 - s v ds =5v, i d =8a i gss - - 100 na v gs = 20 - - 1 a v ds =24v, v gs =0 i dss - - 25 a v ds =20v, v gs =0, tj=125 c - 13.6 18 m v gs =10v, i d =9a *r ds(on) - 23.6 29 m v gs =4.5v, i d =7a dynamic qg (v gs =10v) *1, 2 - 11 - qg (v gs =5v) *1, 2 - 6.4 qgs *1, 2 - 1.9 - qgd *1, 2 - 3 - nc i d =9a, v ds =15v, v gs =10v ciss - 715 - coss - 76 - crss - 66 - pf v gs =0v, v ds =15v, f=1mhz rg - 2.2 - v gs =15mv, v ds =0v, f=1mhz
cystech electronics corp. spec. no. : c737q8 issued date : 2009.04.29 revised date : 2012.03.01 page no. : 3/9 MTB20N03AQ8 cystek product specification characteristics (cont. t c =25 c, unless otherwise specified) symbol min. typ. max. unit test conditions dynamic t d(on) *1, 2 - 7.5 - tr *1, 2 - 12 - t d(off) *1, 2 - 21 - t f *1, 2 - 7 - ns v ds =15v, i d =1a, v gs =10v, r g =6 source-drain diode ratings and characteristics i s *1 - - 2.3 i sm *3 - - 9.2 a v sd *1 - 0.78 1.2 v i f =2.3a, v gs =0v trr - 50 - ns qrr - 2 - nc i f =2.3a, di f /dt=100a/ s note : *1.pulse test : pulse width 300 s, duty cycle 2% *2.independent of operating temperature *3.pulse width limited by maximum junction temperature. ordering information device package shipping MTB20N03AQ8-0-t3-g sop-8 (rohs compliant & halogen-free package) 2500 pcs / tape & reel
cystech electronics corp. spec. no. : c737q8 issued date : 2009.04.29 revised date : 2012.03.01 page no. : 4/9 MTB20N03AQ8 cystek product specification typical characteristics typical output characteristics 0 5 10 15 20 25 30 35 40 01234 5 brekdown voltage vs junction temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage vds, drain-source voltage(v) i d , drain current (a) 10v,9v,8v,7v,6v,5v v gs =4v i d =250 a, v vgs=3v =0v gs static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =3v v gs =10v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 048121620 i dr , reverse drain current(a) v sd , source-drain voltage(v) v gs =0v tj=25c tj=150c static drain-source on-state resistance vs gate-source voltage 0 40 80 120 160 200 240 280 02468 v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) 10 drain-source on-state resistance vs junction tempearture 0.4 0.8 1.2 1.6 2 2.4 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4.5v, i d =7a v gs =10v, i d =9a i d =9a i d =7a
cystech electronics corp. spec. no. : c737q8 issued date : 2009.04.29 revised date : 2012.03.01 page no. : 5/9 MTB20N03AQ8 cystek product specification typical characteristics(cont.) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -20 20 60 100 140 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =10 v v ds =5v v ds =15v gate charge characteristics 0 2 4 6 8 10 024681012 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =9a v ds =15v v ds =10v v ds =5v maximum safe operating area 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) t a =25c, tj=150c v gs =10v, r ja =40c/w single pulse dc 100ms r dson limite 100 s 1ms 1s 10ms maximum drain current vs junction temperature 0 2 4 6 8 10 12 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =40c/w
cystech electronics corp. spec. no. : c737q8 issued date : 2009.04.29 revised date : 2012.03.01 page no. : 6/9 MTB20N03AQ8 cystek product specification typical characteristics(cont.) typical transfer characteristics 0 10 20 30 40 50 60 0246810 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to ambient (note on page 2) 0 10 20 30 40 50 0.01 0.1 1 10 100 1000 pulse width(s) power (w) t j( m ax) =150c t a =25c ja =40c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t a =p dm *r ja (t) 4.r ja =40c/w
cystech electronics corp. spec. no. : c737q8 issued date : 2009.04.29 revised date : 2012.03.01 page no. : 7/9 MTB20N03AQ8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c737q8 issued date : 2009.04.29 revised date : 2012.03.01 page no. : 8/9 MTB20N03AQ8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
cystech electronics corp. spec. no. : c737q8 issued date : 2009.04.29 revised date : 2012.03.01 page no. : 9/9 MTB20N03AQ8 cystek product specification sop-8 dimension marking: 8-lead sop-8 plastic package cystek packa g e code: q8 date code device name b20n03a millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 1.350 1.750 0.053 0.069 e 3.800 4.000 0.150 0.157 a1 0.100 0.250 0.004 0.010 e1 5.800 6.200 0.228 0.244 a2 1.350 1.550 0.053 0.061 e 1.270 (bsc) 0.050 (bsc) b 0.330 0.510 0.013 0.020 l 0.400 1.270 0.016 0.050 c 0.170 0.250 0.006 0.010 8 0 0 8 d 4.700 5.100 0.185 0.200 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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